AC characteristics of optically controlled MESFET (OPFET)

Author

Zebda, Youssef ; Helweh, S.A.

Author_Institution

Dept. of Electr. & Electron. Eng., Sultan Qaboos Univ., Muscat, Oman

Volume

15

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

1205

Lastpage

1212

Abstract

A perturbation technique is used to develop a more accurate model of the time varying characteristics of the optically illuminated ion-implanted metal semiconductor field-effect transistor (MESFET) OPFET. In this model, the carrier life time is considered as a function of the carrier concentration in the channel. The carrier concentration in the active channel is altered due to the absorption of the incident light, which affects the carrier life time. The influences of this effect on the device parameters and characteristics is studied and analyzed. Based on this model the current voltage characteristics, the gate-source capacitance, and the threshold voltage of the OPFET have been evaluated for different incident light power intensities. This model shows comparable results to other reported models

Keywords

Schottky gate field effect transistors; capacitance; carrier density; carrier lifetime; perturbation theory; phototransistors; semiconductor device models; AC characteristics; OPFET; active channel; carrier concentration; carrier life time; current voltage characteristics; device parameters; gate-source capacitance; incident light absorption; incident light power intensities; optically controlled MESFET; optically illuminated ion-implanted metal semiconductor field-effect transistor; perturbation technique; threshold voltage; time varying characteristics; Absorption; FETs; Gallium arsenide; MESFETs; Nonlinear equations; Nonlinear optics; Optical control; Perturbation methods; Radiative recombination; Threshold voltage;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.596967

Filename

596967