Title :
AC characteristics of optically controlled MESFET (OPFET)
Author :
Zebda, Youssef ; Helweh, S.A.
Author_Institution :
Dept. of Electr. & Electron. Eng., Sultan Qaboos Univ., Muscat, Oman
fDate :
7/1/1997 12:00:00 AM
Abstract :
A perturbation technique is used to develop a more accurate model of the time varying characteristics of the optically illuminated ion-implanted metal semiconductor field-effect transistor (MESFET) OPFET. In this model, the carrier life time is considered as a function of the carrier concentration in the channel. The carrier concentration in the active channel is altered due to the absorption of the incident light, which affects the carrier life time. The influences of this effect on the device parameters and characteristics is studied and analyzed. Based on this model the current voltage characteristics, the gate-source capacitance, and the threshold voltage of the OPFET have been evaluated for different incident light power intensities. This model shows comparable results to other reported models
Keywords :
Schottky gate field effect transistors; capacitance; carrier density; carrier lifetime; perturbation theory; phototransistors; semiconductor device models; AC characteristics; OPFET; active channel; carrier concentration; carrier life time; current voltage characteristics; device parameters; gate-source capacitance; incident light absorption; incident light power intensities; optically controlled MESFET; optically illuminated ion-implanted metal semiconductor field-effect transistor; perturbation technique; threshold voltage; time varying characteristics; Absorption; FETs; Gallium arsenide; MESFETs; Nonlinear equations; Nonlinear optics; Optical control; Perturbation methods; Radiative recombination; Threshold voltage;
Journal_Title :
Lightwave Technology, Journal of
