• DocumentCode
    1287777
  • Title

    Terahertz imaging with bow-tie InGaAs-based diode with broken symmetry

  • Author

    Kasalynas, I. ; Seliuta, Dalius ; Simniskis, R. ; Tamosiunas, V. ; Kohler, Klaus ; Valusis, G.

  • Author_Institution
    Semicond. Phys. Inst., Vilnius, Lithuania
  • Volume
    45
  • Issue
    16
  • fYear
    2009
  • Firstpage
    833
  • Lastpage
    835
  • Abstract
    A silicon-lens coupled bow-tie InGaAs-based diode with broken symmetry is demonstrated for terahertz imaging applications below 1 THz at room temperature. Transient features and the dynamic range of the bow-tie InGaAs-based sensor are explored experimentally, proving the possibility to use the device in real-time imaging systems. Response time is found to be less than 7 ns, responsivity of 0.1 mA/W, and noise equivalent power of 5.8 nW/radicHz.
  • Keywords
    III-V semiconductors; indium compounds; semiconductor diodes; submillimetre wave imaging; terahertz wave imaging; InGaAs; bow-tie InGaAs-based diode; broken symmetry; terahertz imaging;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.0336
  • Filename
    5191346
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1287777