DocumentCode :
1287796
Title :
Variation of Relative Intensity Noise With Optical Power in InGaAsP Semiconductor Optical Amplifier
Author :
Yamada, Minoru ; Takeuchi, Nobuhito ; Sakumoto, Kyohei ; Kuwamura, Yuji
Author_Institution :
Div. of Electr. Eng. & Comput. Sci., Kanazawa Univ., Kanazawa, Japan
Volume :
24
Issue :
22
fYear :
2012
Firstpage :
2049
Lastpage :
2051
Abstract :
Relative intensity noise (RIN) is an index to evaluate the amount of noise compared to the optical intensity, which is widely believed to be increased by optical amplification. A previous paper, however, pointed out that theoretically the RIN of the output light of a semiconductor optical amplifier can be reduced from that of the input light, and that the RIN level is determined by the output optical power almost independently from the RIN level of the input light. Detailed experimental data to support these postulations are given in this letter.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser noise; semiconductor optical amplifiers; InGaAsP; RIN level; optical amplification; optical intensity; output optical power; relative intensity noise; semiconductor optical amplifier; Noise; Optical attenuators; Optical noise; Optical saturation; Semiconductor optical amplifiers; Stimulated emission; Optical noise; relative intensity noise (RIN); semiconductor optical amplifier;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2012.2219302
Filename :
6307820
Link To Document :
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