Title :
W-band double-balanced down-conversion mixer with marchand baluns in silicon-germanium technology
Author :
Kim, Jung-Ho ; Kornegay, K.T. ; Alvarado, J. ; Lee, Chia-Han ; Laskar, J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Presented is a monolithic W-band (75-110 GHz) down-conversion mixer consisting of a double-balanced core, Marchand-type on-chip baluns at inputs, and a two-stage output buffer, fabricated in a 200 GHz f T SiGe technology. Including the loss for input baluns, this mixer exhibits conversion gains of 14.4 plusmn 2.8 dB and single sideband (SSB) noise figures of less than 19.5 dB across the entire W-band, drawing 28 mA from a 3.3 V supply.
Keywords :
Ge-Si alloys; baluns; microwave mixers; Marchand-type on-chip baluns; SiGe; W-band double-balanced down-conversion mixer; current 28 mA; double-balanced core; frequency 75 GHz to 110 GHz; silicon-germanium technology; two-stage output buffer; voltage 3.3 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.1128
