Title :
Design of 60 GHz millimetre-wave bandpass filter on bulk CMOS
Author :
yang, Bo ; Skafidas, E. ; Evans, Robin J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Melbourne, Parkville, VIC, Australia
fDate :
9/1/2009 12:00:00 AM
Abstract :
A 60 GHz integrated second-order bandpass filter using rectangular open-loop resonators was designed and fabricated on a 0.13 mum standard CMOS process. The size of the filter is 415.5 times 502.8 mum2.The designed filter has a pair of transmission zeros at finite frequencies in the stopband, exhibiting good selectivity. The measured filter with the grid ground plane has a flat passband and its 1 dB bandwidth is 9 GHz (59.5-68.5 GHz).The insertion loss is about 2.6 dB and the return loss is better than 8.5 dB across the passband. The effects of various ground configurations have been studied. The design was optimised with a new slotted ground plane, and its measurement shows a 1 dB bandwidth of 9 GHz (57 - 66 GHz). The insertion loss is about 1.5 dB and the return loss is better than 9.2 dB across the passband. The new optimised slotted ground provides better than 1 dB and 0.7 dB improvement to insertion and return loss, respectively. A very good agreement between the simulation and measurement results has been achieved for frequencies up to 110 GHz. Compared with other 60 GHz CMOS bandpass filters recently reported in the literature, this 60 GHz CMOS bandpass filter has achieved all of low- insertion loss, compact size and good selectivity in one design. The ground optimised design was also implemented as part of fully integrated 0.13 mum CMOS direct-conversion transmitter.
Keywords :
CMOS integrated circuits; band-pass filters; field effect MIMIC; millimetre wave filters; resonator filters; CMOS direct-conversion transmitter; bulk CMOS; frequency 60 GHz; grid ground plane; insertion loss; loss 1.5 dB; millimetre-wave bandpass filter design; rectangular open-loop resonator; size 0.13 mum;
Journal_Title :
Microwaves, Antennas & Propagation, IET
DOI :
10.1049/iet-map.2008.0222