DocumentCode
128794
Title
Foreword
fYear
2014
fDate
9-11 Sept. 2014
Abstract
The following topics are dealt with: FinFET and nanowire; nonvolatile memories; power devices; spintronic devices; TFT; reliability; variability; atomic level simulation; TCAD application and novel materials; and frontier of simulation and application.
Keywords
magnetoelectronics; nanowires; power semiconductor devices; random-access storage; semiconductor device reliability; technology CAD (electronics); thin film transistors; FinFET; TCAD application; TFT; atomic level simulation; nanowire; nonvolatile memories; power devices; reliability; spintronic devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location
Yokohama
ISSN
1946-1569
Print_ISBN
978-1-4799-5287-8
Type
conf
DOI
10.1109/SISPAD.2014.6931544
Filename
6931544
Link To Document