Abstract :
The following topics are dealt with: FinFET and nanowire; nonvolatile memories; power devices; spintronic devices; TFT; reliability; variability; atomic level simulation; TCAD application and novel materials; and frontier of simulation and application.
Keywords :
magnetoelectronics; nanowires; power semiconductor devices; random-access storage; semiconductor device reliability; technology CAD (electronics); thin film transistors; FinFET; TCAD application; TFT; atomic level simulation; nanowire; nonvolatile memories; power devices; reliability; spintronic devices;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931544
