Title :
Current status and future prospects of non-volatile memory modeling
Author :
Benvenuti, A. ; Ghetti, Andrea ; Mauri, A. ; Liu, Hongying ; Mouli, C.
Author_Institution :
Process R&D, Micron Technol. Inc., Agrate Brianza, Italy
Abstract :
We briefly discuss the evolution of Non-Volatile Memory (NVM) technology in term of macro-trends and their implications for modeling activities in an industrial R&D environment. Some examples of difficult modeling issues for different NVM techologies are mentioned, and finally both present needs and future challanges are critically reviewed.
Keywords :
random-access storage; research and development; NVM technology; activity modeling; industrial R&D environment; macrotrends; nonvolatile memory modeling; Charge carrier processes; Logic gates; Materials; Nonvolatile memory; Oxidation; Solid modeling; Three-dimensional displays;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931549
