Title :
Challenge of adopting TCAD in the development of power semiconductor devices for automotive applications
Author_Institution :
Electron. Dev. Div.3, Toyota Motor Corp., Toyota, Japan
Abstract :
Due to the mass consumption of fossil fuels since the 20th century, the automotive industry is facing various issues, such as the depletion of fuel resources and worsening air quality. Power semiconductor devices can help to resolve these issues by facilitating the development of technologies to save energy and diversify fuel usage. This paper describes the requirements and outlook for power semiconductor devices. It also introduces an example of the adoption of technology computer aided design (TCAD) in power semiconductor device development.
Keywords :
automotive electronics; environmental factors; fossil fuels; power semiconductor devices; technology CAD (electronics); TCAD; air quality; automotive industry; fossil fuels; fuel resources depletion; power semiconductor devices; technology computer aided design; Insulated gate bipolar transistors; Leakage currents; Power semiconductor devices; Reliability; Schottky diodes; Silicon carbide; Vehicles; EV; GaN; HV; PHV; SiC; TCAD; automotive; power device; reliability; vehicle;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931550
