• DocumentCode
    128801
  • Title

    Device and process modeling: 20 Years at Intel´s other fab

  • Author

    Stettler, Mark A.

  • Author_Institution
    Process Technol. Modeling, Intel Corp., Hillsboro, OR, USA
  • fYear
    2014
  • fDate
    9-11 Sept. 2014
  • Firstpage
    13
  • Lastpage
    16
  • Abstract
    Embedding TCAD engineers in technology working groups has been an integral part of Intel´s process development strategy since the company´s inception. While this strategy remains the same, the challenges faced and the tools used by TCAD has undergone dramatic change over the last 20 years. This talk will discuss three recent trends in process and device TCAD: the rise in the use of “atomistic” scale simulations, the focus on modeling defects, and the continuing need to bridge new, more physically rigorous approaches to older, more computationally efficient methods. These trends will be illustrated with recent TCAD studies conducted at Intel.
  • Keywords
    semiconductor device models; technology CAD (electronics); TCAD studies; atomistic scale simulations; physically rigorous approach; process modeling; Computational modeling; Logic gates; MOS devices; Silicon; Stress; Tunneling; TCAD; device modeling; process modeling; semiconductor simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
  • Conference_Location
    Yokohama
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4799-5287-8
  • Type

    conf

  • DOI
    10.1109/SISPAD.2014.6931551
  • Filename
    6931551