DocumentCode :
128801
Title :
Device and process modeling: 20 Years at Intel´s other fab
Author :
Stettler, Mark A.
Author_Institution :
Process Technol. Modeling, Intel Corp., Hillsboro, OR, USA
fYear :
2014
fDate :
9-11 Sept. 2014
Firstpage :
13
Lastpage :
16
Abstract :
Embedding TCAD engineers in technology working groups has been an integral part of Intel´s process development strategy since the company´s inception. While this strategy remains the same, the challenges faced and the tools used by TCAD has undergone dramatic change over the last 20 years. This talk will discuss three recent trends in process and device TCAD: the rise in the use of “atomistic” scale simulations, the focus on modeling defects, and the continuing need to bridge new, more physically rigorous approaches to older, more computationally efficient methods. These trends will be illustrated with recent TCAD studies conducted at Intel.
Keywords :
semiconductor device models; technology CAD (electronics); TCAD studies; atomistic scale simulations; physically rigorous approach; process modeling; Computational modeling; Logic gates; MOS devices; Silicon; Stress; Tunneling; TCAD; device modeling; process modeling; semiconductor simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
ISSN :
1946-1569
Print_ISBN :
978-1-4799-5287-8
Type :
conf
DOI :
10.1109/SISPAD.2014.6931551
Filename :
6931551
Link To Document :
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