Title :
Analysis of heat conduction property in FinFETs using phonon Monte Carlo simulation
Author :
Nur Adisusilo, Indra ; Kukita, Kentaro ; Kamakura, Yoshinari
Author_Institution :
Div. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita, Japan
Abstract :
A phonon transport simulator using a Monte Carlo method is used to analyze the heat conduction properties in FinFET structure. We compare the simulation results to those obtained from the conventional heat conduction equation based on the Fourier´s law, and discuss about the discrepancies attributed to ballistic transport effect. We also analyze the impact of additional heat path through gate contact, and show that it has a less significant but non-negligible contribution which could slightly reduce the hot spot temperature.
Keywords :
MOSFET; Monte Carlo methods; ballistic transport; equivalent circuits; finite element analysis; heat conduction; phonons; semiconductor device models; FinFET; Fourier law; Monte Carlo method; ballistic transport; equivalent thermal circuit model; finite element method; gate contact; heat conduction; phonon transport simulator; FinFETs; Heat sinks; Heating; Logic gates; Monte Carlo methods; Phonons; Silicon;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931552
