Title :
3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors
Author :
Sampedro, C. ; Donetti, L. ; Gamiz, Francisco ; Godoy, Andres ; Garcia-Ruiz, F.J. ; Georgiev, Vihar P. ; Amoroso, Salvatore Maria ; Riddet, C. ; Towie, E.A. ; Asenov, Asen
Author_Institution :
Nanoelectron. Res. Group, Univ. de Granada, Granada, Spain
Abstract :
In this paper we present the development of a 3D Multi Subband Ensemble Monte Carlo (3DMSB-EMC) tool targeting the simulation of nanoscaled FinFETs and nanowire transistors. In order to deliver computational efficiency, we have developed a self-consistent framework that couples a MSB-EMC transport engine for a 1D electron gas with a 3DPoisson-2DSchrödinger solver. Here we use a FinFET with a physical channel length of 15nm as an example to demonstrate the applicability and highlight the benefits of the simulation framework. A comparison of the 3DMSB-EMC with Non-Equilibrium Green´s Functions (NEGFs) in the ballistic limit is used to verify and validate our approach.
Keywords :
Green´s function methods; MOSFET; Monte Carlo methods; Poisson equation; Schrodinger equation; electron gas; nanoelectronics; nanowires; 1D electron gas; 3D multisubband ensemble Monte Carlo simulator; 3DPoisson-2DSchrodinger solver; ballistic limit; computational efficiency; nanoscaled FinFET; nanowire transistors; nonequilibrium Green´s functions; physical channel length; size 15 nm; Computational modeling; FinFETs; Monte Carlo methods; Nanoscale devices; Solid modeling; Three-dimensional displays;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931553