Title :
Accurate fringe capacitance model considering RSD and metal contact for realistic FinFETs and circuit performance simulation
Author :
Kyeungkeun Choe ; TaeYoon An ; SoYoung Kim
Author_Institution :
Coll. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon, South Korea
Abstract :
In this paper, analytical gate fringe capacitance model of FinFETs including metal contact and raised source and drain (RSD) are developed. Each cross capacitance models are derived using conformal mapping and field integration. The proposed models are verified with a three-dimensional field solver, Raphael. By including the additional fringe capacitance from RSD and metal contact in BSIM-CMG platform, realistic transition frequency (fT) and propagation delay of 9-stage ring oscillators are predicted and compared with those predicted by default BSIM-CMG capacitance models.
Keywords :
MOSFET; capacitance; circuit simulation; semiconductor device models; 9-stage ring oscillators; FinFET; RSD; Raphael; accurate fringe capacitance model; circuit performance simulation; conformal mapping; field integration; metal contact; propagation delay; raised source and drain; realistic transition frequency; three-dimensional field solver; Capacitance; Couplings; FinFETs; Integrated circuit modeling; Logic gates; Metals; Solid modeling; Analytical model; BSIM-CMG; FinFETs; contact; fringe capacitance; parasitic; transition frequency;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931555
