Title :
Integrated DC-DC converter using GaAs HBT technology
Author :
Hanington, G. ; Metzger, A. ; Asbeck, P. ; Finlay, H.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
fDate :
11/25/1999 12:00:00 AM
Abstract :
DC-DC boost converters operating at very high switching frequencies (up to 20 MHz) have been fabricated using GaAs HBT technology. The pulsewidth modulator, driver amplifier and power switch have been implemented on a single GaAs chip. With an input voltage of 3.6 V DC, an operating frequency of 10 MHz and an output power of >1.5 W, a power efficiency over 80% has been obtained
Keywords :
DC-DC power convertors; III-V semiconductors; PWM power convertors; bipolar analogue integrated circuits; gallium arsenide; HBT technology; boost converters; driver amplifier; input voltage; integrated DC-DC converter; operating frequency; output power; power efficiency; power switch; pulsewidth modulator; switching frequencies;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991458
