DocumentCode
1288052
Title
Integrated DC-DC converter using GaAs HBT technology
Author
Hanington, G. ; Metzger, A. ; Asbeck, P. ; Finlay, H.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Volume
35
Issue
24
fYear
1999
fDate
11/25/1999 12:00:00 AM
Firstpage
2110
Lastpage
2112
Abstract
DC-DC boost converters operating at very high switching frequencies (up to 20 MHz) have been fabricated using GaAs HBT technology. The pulsewidth modulator, driver amplifier and power switch have been implemented on a single GaAs chip. With an input voltage of 3.6 V DC, an operating frequency of 10 MHz and an output power of >1.5 W, a power efficiency over 80% has been obtained
Keywords
DC-DC power convertors; III-V semiconductors; PWM power convertors; bipolar analogue integrated circuits; gallium arsenide; HBT technology; boost converters; driver amplifier; input voltage; integrated DC-DC converter; operating frequency; output power; power efficiency; power switch; pulsewidth modulator; switching frequencies;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19991458
Filename
815925
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