Title :
Multi-scale modeling of oxygen vacancies assisted charge transport in sub-stoichiometric TiOx for RRAM application
Author :
Pirrotta, O. ; Padovani, A. ; Larcher, Luca ; Zhao, Lu ; Magyari-Kope, B. ; Nishi, Yoshio
Author_Institution :
DISMI - Dept. of Sci. & Methods for Eng., Univ. of Modena & Reggio Emilia, Reggio Emilia, Italy
Abstract :
In this work we investigate the charge transport in sub-stoichiometric TiOx for RRAM applications. We explored the atomic defect configurations actively assisting the charge transport in sub-stoichiometric TiOx through a multi-scale approach. We combined density-functional-theory-based non-equilibrium Green´s function approach (DFT_NEGF) with physical-based trap assisted tunneling (TAT) modeling to identify the defects dominating the current conduction mechanism and the physical parameters of the defects responsible for the trap-assisted tunneling (TAT). The values of the thermal ionization energy ET and relaxation energy EREL extracted are 0.35-0.4eV and 0.7eV, respectively.
Keywords :
Green´s function methods; density functional theory; ionisation; random-access storage; stoichiometry; titanium compounds; tunnelling; DFT-NEGF; RRAM applications; TAT modeling; TiOx; atomic defect configurations; charge transport; conduction mechanism; defect identification; density-functional-theory-based nonequilibrium Green function approach; electron volt energy 0.35 eV to 0.4 eV; electron volt energy 0.7 eV; multiscale modeling; oxygen vacancies; physical parameters; physical-based trap assisted tunneling modeling; relaxation energy; resistive random access memories; substoichiometry; thermal ionization energy; Couplings; Discrete Fourier transforms; Electron traps; Lattices; Temperature; Tin; Tunneling; DFT; Marcus theory; NEGF; RRAM; TiOx; Trap Assisted Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931557
