DocumentCode :
1288078
Title :
Low-frequency voltage mode sensing of magnetoelectric sensor in package
Author :
Li, Fan ; Zhao, Feng ; Zhang, Q.M. ; Datta, Soupayan
Author_Institution :
Electr. Eng. Dept., Pennsylvania State Univ., University Park, PA, USA
Volume :
46
Issue :
16
fYear :
2010
Firstpage :
1132
Lastpage :
1134
Abstract :
An in-package voltage-sensing integrated magnetometer for low frequency neural recording at room temperature is presented. The detection system consists of a voltage mode CMOS amplifier with an active biasing circuit and a Metglas/Polyvinylidene fluoride (PVDF)-based magnetoelectric (ME) unimorph sensor measuring 10 × 3 × 0.025 mm in volume, representing the smallest ME sensor volume reported to date. Over the frequency range of interest (0.5 Hz-1 kHz), both theories and experiments are in excellent agreement and the fabricated magnetometer exhibits a frequency independent signal-to-noise ratio (SNR) at the system level. The magnetometer achieves a SNR of 3000 and detects a minimum detectable field of 30 nano-Tesla waveform. This system in package provides a feasibility demonstration of integration of ME sensors directly with NMOS readout electronics aimed at tiny magnetic field detection for bio-imaging applications.
Keywords :
CMOS analogue integrated circuits; MOS integrated circuits; amplifiers; magnetic sensors; magnetoelectric effects; magnetometers; readout electronics; Metglas; NMOS readout electronics; active biasing circuit; bioimaging applications; in-package voltage-sensing integrated magnetometer; low frequency neural recording; low-frequency voltage mode sensing; magnetic field detection; magnetoelectric magnetoelectric; magnetoelectric sensor; magnetometer; polyvinylidene fluoride; signal-to-noise ratio; voltage mode CMOS amplifier;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2010.1336
Filename :
5542572
Link To Document :
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