Title :
CW second-order complex coupled DFB lasers with low threshold current density and high monomode stability
Author :
Rodadey, J. ; Gourgon, C. ; Gaud, E. ; Martin, Daniel ; Reinhart, F.K.
Author_Institution :
Dept. of Phys., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
fDate :
11/25/1999 12:00:00 AM
Abstract :
High quality second-order complex coupled distributed feedback lasers have been fabricated. The gain coupling is caused by the vertical radiation. The InGaAs/GaAs/AlGaAs as-cleaved lasers are 500 μm long and operate CW at room temperature at 980 nm. The average threshold current density is 300 A/cm2. The sidemode suppression ratios are as high as 47 dB
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; laser stability; quantum well lasers; 980 nm; CW second-order complex coupled DFB laser; InGaAs-GaAs-AlGaAs; InGaAs/GaAs/AlGaAs quantum well laser; distributed feedback laser; fabrication; gain coupling; monomode stability; sidemode suppression ratio; threshold current density; vertical radiation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991404
