Title :
Exploring the limits of the safe operation area of power semiconductor devices
Author :
Sandow, C. ; Baburske, R. ; Niedernostheide, F.-J. ; Pfirsch, F. ; Tochterle, C.
Author_Institution :
Infineon Technol., Neubiberg, Germany
Abstract :
TCAD simulations of power devices are an important tool to investigate destruction mechanisms of power diodes and IGBTs. It is found that the dynamics of filamentation is the key for understanding the limits of the safe operation area. For both diodes and IGBTs, destructive and non-destructive filamentation mechanisms are identified and the resulting destruction mechanisms are discussed.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; power semiconductor diodes; technology CAD (electronics); IGBTs; TCAD simulations; destruction mechanisms; filamentation dynamics; non-destructive filamentation mechanisms; power diodes; power semiconductor devices; safe operation area; Anodes; Charge carrier density; Current density; Impact ionization; Insulated gate bipolar transistors; Plasmas; Semiconductor optical amplifiers;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931560
