DocumentCode :
128812
Title :
Efficient and universal method to design multiple field limiting rings for power devices
Author :
Mochizuki, Marie ; Tanaka, Hiroya ; Hayashi, H.
Author_Institution :
LAPIS Semicond. Co. Ltd., Yokohama, Japan
fYear :
2014
fDate :
9-11 Sept. 2014
Firstpage :
57
Lastpage :
60
Abstract :
For the first time, an efficient and universal method to design multiple field limiting rings (FLR) structure, which applicable to power devices with thin drift layer is proposed. Avalanche breakdown simulations of simplified structures are performed in each three area; the near main junction area, the outmost area, and the other. From simulation results, optimal spacing between each neighboring FLR is efficiently extracted. Phenomena related breakdown voltage determination in each area are also clarified. We demonstrate that the edge termination structures designed along our guidelines succeed to obtain the target blocking voltage in different 600 V class processes.
Keywords :
avalanche breakdown; power semiconductor devices; semiconductor device breakdown; avalanche breakdown simulations; edge termination structures; multiple field limiting rings; phenomena related breakdown voltage determination; power devices; target blocking voltage; thin drift layer; voltage 600 V; Breakdown voltage; Capacitance; Couplings; Electric breakdown; Electric fields; Electric potential; Junctions; FLR; design optimization; power devices; thin drift layer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
ISSN :
1946-1569
Print_ISBN :
978-1-4799-5287-8
Type :
conf
DOI :
10.1109/SISPAD.2014.6931562
Filename :
6931562
Link To Document :
بازگشت