Title :
Time dependent 3-D statistical KMC simulation of high-k degradation including trap generation and electron capture/emission dynamic
Author :
Yijiao Wang ; Peng Huang ; Xiaoyan Liu ; Gang Du ; Jinfeng Kang
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits (MOE), Peking Univ., Beijing, China
Abstract :
A comprehensive time dependent three dimensional simulation framework for high-k degradation is developed. In this framework, the models that account for trap generation in high-k, capture/emission dynamic, and statistical variability are incorporated in the simulation. The influence of the trap generation model on distribution of traps, threshold voltage, and the amount of trapped charge is investigated in detail, thereby lay a solid foundation for predicting more accurate design margins at circuit/system level in the future.
Keywords :
MOSFET; Monte Carlo methods; high-k dielectric thin films; semiconductor device models; statistical analysis; circuit-system level; comprehensive time dependent three dimensional simulation framework; design margins; electron capture-emission dynamic; high-k degradation; kinetic Monte Carlo engine; statistical variability; threshold voltage; time dependent 3D statistical KMC simulation; trap generation model; trapped charge; Degradation; Electron traps; Hafnium compounds; High K dielectric materials; Logic gates; Mathematical model; Reliability; capture/emission; high-k degradation; time dependent; trap generation; variability;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931569
