Title :
Simultaneous three-state lasing in quantum dot laser at room temperature
Author :
Zhang, Zhenhua Yu ; Jiang, Qimeng ; Hogg, R.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
The first quantum dot laser under simultaneous three-state lasing operation at room temperature has been realised. The device exhibits ground state lasing at 1306 nm, the fist excited state lasing at 1213 nm and the second excited state lasing at 1152 nm synchronously. This is attributed to the long carrier relaxation time from higher energy levels to lower energy levels.
Keywords :
electroluminescence; quantum dot lasers; self-assembly; semiconductor quantum dots; long carrier relaxation time; quantum dot laser; three-state lasing operation; wavelength 1152 nm; wavelength 1213 nm; wavelength 1306 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.1669