Title :
Gate recessing of GaN MESFETs using photoelectrochemical wet etching
Author :
Ping, A.T. ; Selvanathan, D. ; Youtsey, C. ; Piner, E. ; Redwing, J. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
11/25/1999 12:00:00 AM
Abstract :
For the first time GaN-based MESFETs which have been recessed using a wet etching process are presented. Photoelectrochemical etching was used to recess openings through the heavily-doped n-GaN cap and into the n-GaN channel. The DC and RF characteristics of recessed-gate GaN MESFETs are presented
Keywords :
Schottky gate field effect transistors; DC characteristics; GaN; GaN MESFET; RF characteristics; gate recessing; photoelectrochemical wet etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991341
