• DocumentCode
    1288198
  • Title

    Gate recessing of GaN MESFETs using photoelectrochemical wet etching

  • Author

    Ping, A.T. ; Selvanathan, D. ; Youtsey, C. ; Piner, E. ; Redwing, J. ; Adesida, I.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
  • Volume
    35
  • Issue
    24
  • fYear
    1999
  • fDate
    11/25/1999 12:00:00 AM
  • Firstpage
    2140
  • Lastpage
    2141
  • Abstract
    For the first time GaN-based MESFETs which have been recessed using a wet etching process are presented. Photoelectrochemical etching was used to recess openings through the heavily-doped n-GaN cap and into the n-GaN channel. The DC and RF characteristics of recessed-gate GaN MESFETs are presented
  • Keywords
    Schottky gate field effect transistors; DC characteristics; GaN; GaN MESFET; RF characteristics; gate recessing; photoelectrochemical wet etching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991341
  • Filename
    815945
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1288198