DocumentCode :
1288207
Title :
Improving thermal stability of shallow junctions by N2 + pre-implantation
Author :
Yang, Wen Luh ; Wu, Wen-Fa ; Liu, Don-Gey ; Hung, Tung-Ching ; Tseng, Fu Yuan
Author_Institution :
Dept. of Electr. Eng., Feng Chia Univ., Taichung, Taiwan
Volume :
35
Issue :
24
fYear :
1999
fDate :
11/25/1999 12:00:00 AM
Firstpage :
2143
Lastpage :
2145
Abstract :
A highly thermally stable shallow p+/n junction has been fabricated. it was found that N2+ pre-implantation can lead to a significant stabilisation of CoSi2 films during high temperature annealing. TEM delineation results confirm that the CoSi2 film remains smooth and uniform with the N2+ pre-implantation while agglomeration occurs on the non-N2+-implanted sample
Keywords :
annealing; cobalt compounds; ion implantation; p-n junctions; thermal stability; transmission electron microscopy; CoSi2; CoSi2 film; N2; N2+ pre-implantation; SADS process; TEM; high temperature annealing; shallow p+/n junction; silicide-as-diffusion-source; thermal stability;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19991428
Filename :
815947
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1288207
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