3D atomistic simulations of bulk, FDSOI and Fin FETs sensitivity to oxide reliability

New architectures introduction succeeded in reducing the device performances dispersion in scaled transistors, but as a consequence the relative importance of oxide reliability increased. In this work we present original results of charged interface traps impact on bulk, FDSOI and Fin FETs performances. Traps time constants are analyzed and recoverable and permanent degradation proportions are derived. Finally transistors parameters dispersion increase with time are simulated demonstrating our simulator ability to provide accurate reliability predictions for these three architectures.