Title :
Thin nitride-capped poly-resistor for high density and high performance SRAM with self-aligned-contact
Author :
Yaung, Dun-Nian ; Fang, Yean-Kucn ; Huang, Kuo-Ching ; Wuu, Shou-Gwo ; Wang, Chung-S ; Liang, Mong-Song
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
11/25/1999 12:00:00 AM
Abstract :
A thin (45 Å) nitride-capped poly-resistor is presented which is compatible with the self-aligned-contact process owing to the use of high-temperature RTP annealing just after nitride deposition without pattern definition. It has several advantages, including a simple structure and fabrication process, tight control of the high poly-resistance and better I-V linearity
Keywords :
SRAM chips; elemental semiconductors; rapid thermal annealing; resistors; silicon; 45 angstrom; I-V linearity; SRAM; Si; fabrication; high-temperature RTP annealing; nitride cap deposition; polysilicon resistor; self-aligned-contact;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991400
