Title :
Semi-classical ensemble Monte Carlo simulator using innovative quantum corrections for nano-scale n-channel FinFETs
Author :
Crum, Dax M. ; Valsaraj, Amithraj ; Register, Leonard F. ; Banerjee, Sanjay K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
Abstract :
We present a three-dimensional semi-classical ensemble Monte Carlo device simulator with novel quantum corrections. The simulator includes a beyond-Fermi treatment of Pauli-Exclusion-blocked scattering, and a valley-dependent treatment of various quantum confinement effects. Quantum corrections to the potential are used not only to model redistribution of carriers in real space, but also to model altered energy valley offsets and associated redistribution of carriers in k-space, and quantum-confined scattering rates, including a new approach to model surface roughness scattering. We illustrate the capabilities of the simulator using different levels of modeling, with an emphasis on modeling nano-scale FinFETs with degenerate carrier populations, including III-V devices.
Keywords :
MOSFET; Monte Carlo methods; semiconductor device models; surface roughness; Pauli Exclusion blocked scattering; beyond Fermi treatment; innovative quantum corrections; nanoscale n channel FinFET; quantum confinement effects; semiclassical ensemble Monte Carlo simulator; surface roughness scattering; FinFETs; Logic gates; Monte Carlo methods; Potential well; Scattering; Silicon; FinFET; III-V; Monte Carlo; degenerate semiconductors; device modeling; n-MOS; quantum-confinement; scaling; surface roughness scattering;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931575
