The Wigner Monte Carlo method for accurate semiconductor device simulation

Author

Ellinghaus, P. ; Nedjalkov, M. ; Selberherr, Siegfried

Author_Institution

Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria

fYear

2014

fDate

9-11 Sept. 2014

Firstpage

113

Lastpage

116

Abstract

The Wigner equation can conveniently describe quantum transport problems in terms of particles evolving in the phase space. Improvements in the particle generation scheme of the Wigner Monte Carlo method are shown, which increase the accuracy of simulations as validated by comparison to exact solutions of the Schrödinger equation. Simulations with a time-varying potential are demonstrated and issues which arise in devices with an externally applied voltage between the contacts are treated, thereby further advancing the Wigner Monte Carlo method for the simulation of semiconductor devices.

Keywords

Monte Carlo methods; Schrodinger equation; Wigner distribution; semiconductor device models; Schrödinger equation; Wigner Monte Carlo method; Wigner equation; exact solutions; externally applied voltage; particle generation scheme; phase space; quantum transport problems; semiconductor device simulation; time-varying potential; Coherence; Equations; Mathematical model; Monte Carlo methods; Nanoscale devices; Numerical models; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on

Conference_Location

Yokohama

ISSN

1946-1569

Print_ISBN

978-1-4799-5287-8

Type

conf

DOI

10.1109/SISPAD.2014.6931576

Filename

6931576