Title :
DIBL-Induced Program Disturb Characteristics in 32-nm NAND Flash Memory Array
Author :
Myounggon Kang ; Wookghee Hahn ; Il Han Park ; Juyoung Park ; Youngsun Song ; Hocheol Lee ; Changgyu Eun ; Sanghyun Ju ; Kihwan Choi ; Youngho Lim ; Seunghyun Jang ; Seongjae Cho ; Byung-Gook Park ; Hyungcheol Shin
Author_Institution :
Interuniv. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea
Abstract :
In this brief, we have investigated the program disturb characteristics caused by drain-induced barrier lowering (DIBL) in a 32-nm nand Flash memory device. It was found that the VTH shift of the (N + 2)th erased state cell is larger than that of the (N + 1)th erased state cell if it is assumed that the channel of the Nth cell is cut off. It is revealed that the cut off is caused by a cell-to-cell coupling effect that is becoming more severe in the development of high-density Flash memory arrays.
Keywords :
NAND circuits; flash memories; logic gates; DIBL-induced program disturb characteristics; NAND flash memory array; cell-to-cell coupling effect; drain-induced barrier lowering; high-density flash memory arrays; size 32 nm; Arrays; Couplings; Current measurement; Electric potential; Flash memory; Interference; Logic gates; Cell-to-cell interference; drain-induced barrier lowering (DIBL); gate-induced drain leakage (GIDL); hot-carrier injection (HCI); nand string;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2161313
