• DocumentCode
    1288366
  • Title

    Impact of Eddy Currents and Crowding Effects on High-Frequency Losses in Planar Schottky Diodes

  • Author

    Aik Yean Tang ; Stake, Jan

  • Author_Institution
    Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
  • Volume
    58
  • Issue
    10
  • fYear
    2011
  • Firstpage
    3260
  • Lastpage
    3269
  • Abstract
    In this paper, we present the influence of eddy currents, skin and proximity effects on high-frequency losses in planar terahertz Schottky diodes. The high-frequency losses, particularly losses due to the spreading resistance, are analyzed as a function of the ohmic-contact mesa geometry for frequencies up to 600 GHz. A combination of 3-D electromagnetic (EM) simulations and parameter extraction based on lumped equivalent circuit is used for the analysis. The extracted low-frequency spreading resistance shows a good agreement with the results from electrostatic simulations and experimental data. By taking into consideration the EM field couplings, the analysis shows that the optimum ohmic-contact mesa thickness is approximately one-skin depth at the operating frequency. It is also shown that, for a typical diode, the onset of eddy current loss starts at ~ 200 GHz, and the onset of a mixture of skin and proximity effects occurs around ~ 400 GHz.
  • Keywords
    Schottky diodes; eddy current losses; equivalent circuits; ohmic contacts; skin effect; submillimetre wave diodes; 3D electromagnetic simulations; crowding effects; eddy currents; high-frequency losses; lumped equivalent circuit; ohmic-contact mesa geometry; parameter extraction; planar terahertz Schottky diodes; proximity effects; skin effects; spreading resistance; Atmospheric modeling; Couplings; Equivalent circuits; Geometry; Integrated circuit modeling; Resistance; Schottky diodes; Current distribution; Schottky diodes; eddy current; electromagnetic coupling; geometric modeling; parameter extraction; proximity effect; resistance; skin effect; submillimeter-wave devices; submillimeter-wave integrated circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2160724
  • Filename
    5970111