DocumentCode
128845
Title
DC, AC and noise simulation of organic semiconductor devices based on the master equation
Author
Jungemann, Christoph ; Zimmermann, Christian
Author_Institution
Dept. of Electromagn. Theor., RWTH Aachen Univ., Aachen, Germany
fYear
2014
fDate
9-11 Sept. 2014
Firstpage
137
Lastpage
140
Abstract
The hopping transport in organic semiconductors produces characteristic frequency dependencies of the admittance and noise, which are calculated in this paper for the first time based on the master equation approach, where noise is evaluated by the Langevin approach and a modified Ramo-Shockley theorem. At low frequencies and low injection the non-equilibrium noise is found to be shot noise in the framework of this model.
Keywords
organic semiconductors; semiconductor device models; semiconductor device noise; shot noise; AC simulation; DC simulation; Langevin approach; characteristic frequency dependencies; hopping transport; master equation; modified Ramo-Shockley theorem; noise simulation; nonequilibrium noise; organic semiconductor devices; shot noise; Boundary conditions; Current density; Equations; Mathematical model; Noise; Organic semiconductors; Poisson equations;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location
Yokohama
ISSN
1946-1569
Print_ISBN
978-1-4799-5287-8
Type
conf
DOI
10.1109/SISPAD.2014.6931582
Filename
6931582
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