Title :
DC, AC and noise simulation of organic semiconductor devices based on the master equation
Author :
Jungemann, Christoph ; Zimmermann, Christian
Author_Institution :
Dept. of Electromagn. Theor., RWTH Aachen Univ., Aachen, Germany
Abstract :
The hopping transport in organic semiconductors produces characteristic frequency dependencies of the admittance and noise, which are calculated in this paper for the first time based on the master equation approach, where noise is evaluated by the Langevin approach and a modified Ramo-Shockley theorem. At low frequencies and low injection the non-equilibrium noise is found to be shot noise in the framework of this model.
Keywords :
organic semiconductors; semiconductor device models; semiconductor device noise; shot noise; AC simulation; DC simulation; Langevin approach; characteristic frequency dependencies; hopping transport; master equation; modified Ramo-Shockley theorem; noise simulation; nonequilibrium noise; organic semiconductor devices; shot noise; Boundary conditions; Current density; Equations; Mathematical model; Noise; Organic semiconductors; Poisson equations;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931582
