DocumentCode
1288465
Title
A 245 GHz LNA in SiGe Technology
Author
Schmalz, Klaus ; Borngräber, Johannes ; Mao, Yanfei ; Rücker, Holger ; Weber, Rainer
Author_Institution
IHP, Frankfurt (Oder), Germany
Volume
22
Issue
10
fYear
2012
Firstpage
533
Lastpage
535
Abstract
A five-stage differential SiGe low noise amplifier (LNA) in cascode topology is presented. Transformer coupling is used between the stages to obtain inter-stage matching. The single ended input and output of the LNA are realized by baluns. The LNA has 18 dB of gain at 245 GHz and a 3 dB bandwidth of 8 GHz. A noise figure of 11 ±1 dB NF of the LNA at 245 GHz was measured by the Y-factor method. These values represent the highest gain and the lowest measured noise figure at 245 GHz reported for a SiGe LNA so far. The LNA draws 82 mA at a supply voltage of 3.7 V.
Keywords
Ge-Si alloys; baluns; low noise amplifiers; millimetre wave amplifiers; LNA; SiGe; Y-factor method; baluns; cascode topology; current 82 mA; five-stage differential low noise amplifier; frequency 245 GHz; gain 18 dB; gain 3 dB; inter-stage matching; transformer coupling; voltage 3.7 V; Frequency measurement; Gain; Gain measurement; Noise; Noise measurement; Silicon germanium; Temperature measurement; Low noise amplifier (LNA); SiGe; mm-wave circuit;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2012.2218097
Filename
6308732
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