Investigation of retention behavior for 3D charge trapping NAND flash memory by 2D self-consistent simulation

Author

Zhiyuan Lun ; Shuhuan Liu ; Yuan He ; Yi Hou ; Kai Zhao ; Gang Du ; Xiaoyan Liu ; Yi Wang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2014

fDate

9-11 Sept. 2014

Firstpage

141

Lastpage

144

Abstract

This paper presents a comprehensive investigation on retention behavior for three-dimensional charge trapping NAND flash memory by two-dimensional self-consistent simulation. Major physical mechanisms, including tunneling, charge trapping and de-trapping process as well as drift-diffusion have been incorporated into the simulator. The developed simulator is able to describe the charge transport along the bitline and in vertical direction in the memory structure. This work aims to help to design and optimize three-dimensional stackable CT-NAND architectures.

Keywords

NAND circuits; flash memories; 2D self-consistent simulation; 3D charge trapping; 3D stackable CT-NAND architectures; NAND flash memory; charge de-trapping process; charge transport; charge trapping process; drift-diffusion; physical mechanisms; retention behavior; Electron traps; Flash memories; Logic gates; Solid modeling; Three-dimensional displays; Tunneling; NAND flash; charge trapping; retention; two-dimensional simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on

Conference_Location

Yokohama

ISSN

1946-1569

Print_ISBN

978-1-4799-5287-8

Type

conf

DOI

10.1109/SISPAD.2014.6931583

Filename

6931583