Title :
Effective Capacitance and Drive Current for Tunnel FET (TFET) CV/I Estimation
Author :
Mookerjea, Saurabh ; Krishnan, Ramakrishnan ; Datta, Suman ; Narayanan, Vijaykrishnan
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
Through mixed-mode device and circuit simulation, this paper provides an estimate of the effective output capacitance (C EFF) and drive current (I EFF) for delay (tauf = 0.69 R sw C EFF, where R sw = V DD/2 I EFF) estimation of unloaded tunnel field-effect transistor (TFET) inverters. It is shown that unlike MOSFET inverters, where C EFF is approximately equal to the gate capacitance (C gg) , in TFET inverters, the output capacitance can be as high as 2.6 times the gate capacitance. A three-point model is proposed to extract the effective drive current from the real-time switching current trajectory in a TFET inverter.
Keywords :
circuit simulation; field effect transistors; invertors; circuit simulation; drive current; effective output capacitance; gate capacitance; mixed-mode device; real-time switching current trajectory; three-point model; tunnel FET; tunnel field-effect transistor inverters; Delay effects; Delay estimation; FETs; Inverters; MOSFET circuits; Nanoelectronics; Quantum capacitance; Switching circuits; Tunneling; Voltage; Indium arsenide (InAs); MOSFETs; Miller capacitance; switching current trajectory; tunnel field-effect transistors (TFETs);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2026516
