• DocumentCode
    1288567
  • Title

    Novel Thermally Stable Single-Component Organic-Memory Cell Based on Oxotitanium Phthalocyanine Material

  • Author

    Kuang, Yongbian ; Huang, Ru ; Tang, Yu ; Ding, Wei ; Yu, Zhe ; Ma, Ying ; Zhang, Lijie ; Wu, Dake ; Wen, Yongqiang ; Song, Yanlin

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • Volume
    30
  • Issue
    9
  • fYear
    2009
  • Firstpage
    931
  • Lastpage
    933
  • Abstract
    This letter reports a novel single-component organic-memory cell based on oxotitanium phthalocyanine (TiOPc) material. The device can achieve good resistive-switching performance such as a high on/off current ratio of about 104, large read signal window (4 V), and good retention (4 h at 1-V read voltage). The organic-memory cell exhibits excellent thermal stability above 525 K due to the thermal robustness of TiOPc, which indicates its potential for hybrid integration with CMOS technology at the back-end process and flexible electronics system. The current-voltage characteristics are comprehensively investigated, and a possible mechanism is proposed and well fitted with the experimental data. The results show that the trap-filling space-charge-limited conduction with TiOPc charge confinement and the electrochemical reaction at the Al/TiOPc interface can elucidate the switching behavior of the memory cell.
  • Keywords
    CMOS integrated circuits; cells (electric); electrochemical devices; flexible electronics; organic compounds; semiconductor storage; space-charge limited devices; CMOS technology; back-end process; charge confinement; current-voltage characteristics; electrochemical reaction; flexible electronics system; hybrid integration; oxotitanium phthalocyanine material; resistive-switching performance; thermal robustness; thermally stable single-component organic-memory cell; time 4 h; trap-filling space-charge-limited conduction; voltage 1 V; Organic memory; oxotitanium phthalocyanine (TiOPc); resistive switching; space-charge-limited conduction (SCLC); thermal robustness;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2025893
  • Filename
    5196709