DocumentCode :
128867
Title :
The role of electron viscosity on plasma-wave instability in HEMTs
Author :
He Wang ; Wenshen Li ; Jinyu Zhang ; Yan Wang ; Zhiping Yu
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear :
2014
fDate :
9-11 Sept. 2014
Firstpage :
177
Lastpage :
180
Abstract :
Conditions for terahertz (THz) radiation due to the plasma-wave instability in the channel of HEMTs are re-examined by considering the electron viscosity in carrier hydrodynamic transport. Not only the DC output I-V characteristics are affected, but also the window for plasma-wave instability is altered by the term with viscosity in the transport equation. The solution procedure and numerical study are presented. The analysis has been applied to recent experimental work and it is shown that the device parameters required for plasma-wave instability are more stringent than those reported in the up-to-date THz emission experiments.
Keywords :
high electron mobility transistors; plasma instability; viscosity; DC output I-V characteristics; HEMT; carrier hydrodynamic transport; electron viscosity; plasma-wave instability; terahertz radiation; transport equation; Electron mobility; HEMTs; Logic gates; MODFETs; Scattering; Viscosity; plasma-wave instability; terahertz; viscosity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
ISSN :
1946-1569
Print_ISBN :
978-1-4799-5287-8
Type :
conf
DOI :
10.1109/SISPAD.2014.6931592
Filename :
6931592
Link To Document :
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