DocumentCode
128867
Title
The role of electron viscosity on plasma-wave instability in HEMTs
Author
He Wang ; Wenshen Li ; Jinyu Zhang ; Yan Wang ; Zhiping Yu
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
2014
fDate
9-11 Sept. 2014
Firstpage
177
Lastpage
180
Abstract
Conditions for terahertz (THz) radiation due to the plasma-wave instability in the channel of HEMTs are re-examined by considering the electron viscosity in carrier hydrodynamic transport. Not only the DC output I-V characteristics are affected, but also the window for plasma-wave instability is altered by the term with viscosity in the transport equation. The solution procedure and numerical study are presented. The analysis has been applied to recent experimental work and it is shown that the device parameters required for plasma-wave instability are more stringent than those reported in the up-to-date THz emission experiments.
Keywords
high electron mobility transistors; plasma instability; viscosity; DC output I-V characteristics; HEMT; carrier hydrodynamic transport; electron viscosity; plasma-wave instability; terahertz radiation; transport equation; Electron mobility; HEMTs; Logic gates; MODFETs; Scattering; Viscosity; plasma-wave instability; terahertz; viscosity;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location
Yokohama
ISSN
1946-1569
Print_ISBN
978-1-4799-5287-8
Type
conf
DOI
10.1109/SISPAD.2014.6931592
Filename
6931592
Link To Document