• DocumentCode
    128867
  • Title

    The role of electron viscosity on plasma-wave instability in HEMTs

  • Author

    He Wang ; Wenshen Li ; Jinyu Zhang ; Yan Wang ; Zhiping Yu

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • fYear
    2014
  • fDate
    9-11 Sept. 2014
  • Firstpage
    177
  • Lastpage
    180
  • Abstract
    Conditions for terahertz (THz) radiation due to the plasma-wave instability in the channel of HEMTs are re-examined by considering the electron viscosity in carrier hydrodynamic transport. Not only the DC output I-V characteristics are affected, but also the window for plasma-wave instability is altered by the term with viscosity in the transport equation. The solution procedure and numerical study are presented. The analysis has been applied to recent experimental work and it is shown that the device parameters required for plasma-wave instability are more stringent than those reported in the up-to-date THz emission experiments.
  • Keywords
    high electron mobility transistors; plasma instability; viscosity; DC output I-V characteristics; HEMT; carrier hydrodynamic transport; electron viscosity; plasma-wave instability; terahertz radiation; transport equation; Electron mobility; HEMTs; Logic gates; MODFETs; Scattering; Viscosity; plasma-wave instability; terahertz; viscosity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
  • Conference_Location
    Yokohama
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4799-5287-8
  • Type

    conf

  • DOI
    10.1109/SISPAD.2014.6931592
  • Filename
    6931592