DocumentCode :
128868
Title :
On the validity of momentum relaxation time in low-dimensional carrier gases
Author :
Stanojevic, Zlatan ; Baumgartner, Oskar ; Karner, M. ; Filipovic, Lado ; Kernstock, C. ; Kosina, Hans
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear :
2014
fDate :
9-11 Sept. 2014
Firstpage :
181
Lastpage :
184
Abstract :
The momentum relaxation time (MRT) is widely used to simplify low-field mobility calculations including anisotropic scattering processes. Although not always fully justified, it has been very practical in simulating transport in bulk and in low-dimensional carrier gases alike. We review the assumptions behind the MRT, quantify the error introduced by its usage for low-dimensional carrier gases, and point out its weakness in accounting for inter-subband interaction, occurring specifically at low inversion densities.
Keywords :
Boltzmann equation; carrier mobility; MRT; anisotropic scattering processes; intersubband interaction; low inversion density; low-dimensional carrier gases; low-field mobility calculations; momentum relaxation time; Approximation methods; Computational modeling; Couplings; Electron mobility; Gases; Scattering; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
ISSN :
1946-1569
Print_ISBN :
978-1-4799-5287-8
Type :
conf
DOI :
10.1109/SISPAD.2014.6931593
Filename :
6931593
Link To Document :
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