Numerical simulation of current noise caused by potential fluctuation in nanowire FET with an oxide trap

We present a theoretical study on the temporal current fluctuation in nanowire FET caused by the presence of a single gate oxide trap through the Coulomb interaction. Our calculations based on the scattering theoretical formulation of the current noise showed that the presence of the trap level in the gate insulator gives rise to the enhancement of the noise at a specific gate voltage. The peak position of the noise is related to the capacitive coupling strengths of the trap to the channel and the gate electrode, suggesting that the current noise can be used to measure such physical quantities.