Title :
Electromigration in solder bumps: A mean-time-to-failure TCAD study
Author :
Ceric, H. ; Zisser, W.H. ; Rovitto, M. ; Selberherr, Siegfried
Author_Institution :
Christian Doppler Lab. for Reliability Issues in Microelectron., Inst. for Microelectron., Linz, Austria
Abstract :
The mechanical and electrical properties of solder bumps influence the overall reliability of 3D ICs. A characteristic of solder bumps is that during technology processing and usage their material composition changes. This compositional transformation is enhanced by electromigration and leads to the formation of voids which can cause a complete failure of a solder bump. In this paper we present a compact model for prediction of the mean-time-to-failure of solder bumps under the influence of electromigration.
Keywords :
electromigration; failure analysis; integrated circuit reliability; solders; technology CAD (electronics); three-dimensional integrated circuits; voids (solid); 3D IC reliability; compositional transformation; electrical properties; electromigration; material composition changes; mean-time-to-failure TCAD study; mechanical properties; solder bump characteristic; voids; Current density; Electromigration; Mathematical model; Resistance; Semiconductor process modeling; Stress; Tin;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931603
