DocumentCode :
128893
Title :
Modelinig and algorithms of device simulation for ultra-high speed devices
Author :
Mutoh, Hideki
Author_Institution :
Link Res. Corp. Odawara, Odawara, Japan
fYear :
2014
fDate :
9-11 Sept. 2014
Firstpage :
225
Lastpage :
228
Abstract :
The physical models and algorithms of device simulation for ultra-high speed devices are proposed. The propagation of electromagnetic field induced by electrodes cannot be ignored for analyses of ultra-high speed devices. In order to obtain the consistent basic equations for the both of device and electromagnetic field propagation simulations, we newly introduce Nakanishi-Lautrup (NL) field of quantum electrodynamics (QED) to the electromagnetic field model. The models and algorithms are reported with some calculation results.
Keywords :
electromagnetic fields; quantum electrodynamics; semiconductor device models; very high speed integrated circuits; Nakanishi-Lautrup field; QED; device simulation; electromagnetic field model; electromagnetic field propagation; quantum electrodynamics; ultrahigh speed devices; Electric potential; Electrodes; Electromagnetic fields; Equations; Logic gates; Mathematical model; Substrates; Nakanishi-Lautrup field; carrier generation; device simulation; field propagation; ultra-high speed;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
ISSN :
1946-1569
Print_ISBN :
978-1-4799-5287-8
Type :
conf
DOI :
10.1109/SISPAD.2014.6931604
Filename :
6931604
Link To Document :
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