Title :
Diameter dependence of scattering limited transport properties of Si nanowire MOSFETs under uniaxial tensile strain
Author :
Tanaka, T. ; Itoh, Kohei M.
Author_Institution :
Sch. of Fundamental Sci. & Technol., Keio Univ., Yokohama, Japan
Abstract :
Effects of the diameter on the drain current of uniaxially strained Si nanowire (NW) MOSFETs are investigated. Based on the deterministic solution of the multi-subband Boltzmann transport equation, the drain current is calculated considering the intravalley acoustic phonon scatterings, intervalley phonon scatterings and interface roughness scatterings. We found 3 nm diameter [110] oriented Si NW MOSFETs shows ~2X drain current enhancement by the 1% uniaxial tensile strain.
Keywords :
Boltzmann equation; MOSFET; elemental semiconductors; internal stresses; nanowires; silicon; Si; diameter dependence; drain current; interface roughness scatterings; intervalley phonon scatterings; intravalley acoustic phonon scatterings; multisubband Boltzmann transport equation; scattering limited transport properties; size 3 nm; uniaxial tensile strain; uniaxially strained Si nanowire MOSFET; Ballistic transport; Effective mass; Logic gates; MOSFET; Scattering; Silicon; Tensile strain; MOSFET; nanowire; silicon; uniaxial strain;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931605
