Diameter dependence of scattering limited transport properties of Si nanowire MOSFETs under uniaxial tensile strain

Author

Tanaka, T. ; Itoh, Kohei M.

Author_Institution

Sch. of Fundamental Sci. & Technol., Keio Univ., Yokohama, Japan

fYear

2014

fDate

9-11 Sept. 2014

Firstpage

229

Lastpage

232

Abstract

Effects of the diameter on the drain current of uniaxially strained Si nanowire (NW) MOSFETs are investigated. Based on the deterministic solution of the multi-subband Boltzmann transport equation, the drain current is calculated considering the intravalley acoustic phonon scatterings, intervalley phonon scatterings and interface roughness scatterings. We found 3 nm diameter [110] oriented Si NW MOSFETs shows ~2X drain current enhancement by the 1% uniaxial tensile strain.

Keywords

Boltzmann equation; MOSFET; elemental semiconductors; internal stresses; nanowires; silicon; Si; diameter dependence; drain current; interface roughness scatterings; intervalley phonon scatterings; intravalley acoustic phonon scatterings; multisubband Boltzmann transport equation; scattering limited transport properties; size 3 nm; uniaxial tensile strain; uniaxially strained Si nanowire MOSFET; Ballistic transport; Effective mass; Logic gates; MOSFET; Scattering; Silicon; Tensile strain; MOSFET; nanowire; silicon; uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on

Conference_Location

Yokohama

ISSN

1946-1569

Print_ISBN

978-1-4799-5287-8

Type

conf

DOI

10.1109/SISPAD.2014.6931605

Filename

6931605