Title :
Ultrafast, dual-depletion region, InGaAs/InP p-i-n detector
Author :
Effenberger, Frank J. ; Joshi, Abhay M.
Author_Institution :
Discovery Semicond. Inc., Cranbury, NJ, USA
fDate :
8/1/1996 12:00:00 AM
Abstract :
The design of a new kind of photodetector, the dual-depletion region p-i-n photodetector, is presented. This vertical detector has a parasitic capacitance and transit time that can be controlled semi-independently. This eases the classical tradeoff between these two speed limiting factors, allowing the design of large, fast detectors. A theoretical analysis of the transit time effect and the capacitance effect is made. This analysis is then used to compute optimum design parameters
Keywords :
III-V semiconductors; capacitance; gallium arsenide; high-speed optical techniques; indium compounds; optical design techniques; optimisation; p-i-n photodiodes; photodetectors; InGaAs-InP; InGaAs/InP p-i-n detector; capacitance effect; dual-depletion region; fast detectors; optimum design parameters; parasitic capacitance; photodetector design; speed limiting factors; transit time; transit time effect; vertical detector; Absorption; Capacitance; Charge carrier processes; Detectors; Electrodes; Indium gallium arsenide; Indium phosphide; Optical pulse shaping; PIN photodiodes; Resonance;
Journal_Title :
Lightwave Technology, Journal of
