Title :
BTB tunneling in InAs/Si heterojunctions
Author :
Filipovic, Lado ; Baumgartner, Oskar ; Stanojevic, Zlatan ; Kosina, Hans
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
Abstract :
This works presents a study of the location of 3D band-to-band tunneling barriers in order to create improved tunneling devices. Specifically, the i-Si/n-InAs junction is considered. The large lattice mismatch in this material system causes dislocations in the interface and traps in the bandgap. Alternative device configurations are considered that move the tunneling away from the physical interface, therefore reducing the the effects of lattice mismatch on tunneling current.
Keywords :
III-V semiconductors; dislocation structure; energy gap; indium compounds; semiconductor heterojunctions; silicon; tunnelling; 3D band-to-band tunneling barriers; BTB tunneling devices; InAs-Si; InAs-Si Heterojunctions; band gap; dislocations; i-Si-n-InAs junction; lattice mismatch; material system; physical interface; tunneling current; Heterojunctions; Logic gates; Photonic band gap; Silicon; Three-dimensional displays; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931609
