Atomistic simulations of phonon- and alloy-scattering-limited mobility in SiGe nFinFETs

Author

Hong-Hyun Park ; Yang Lu ; Woosung Choi ; Young-Tae Kim ; Keun-Ho Lee ; Youngkwan Park

Author_Institution

Device Lab., Samsung Semicond. Inc., San Jose, CA, USA

fYear

2014

fDate

9-11 Sept. 2014

Firstpage

257

Lastpage

260

Abstract

This paper presents atomistic simulation results about the performance limits of electron mobility in SiGe-channel nFinFETs, where phonon- and alloy-scattering-limited mobility are calculated based on the empirical tight-binding and the valence force field methods without any mobility fitting parameters. The effect of the changes in the fin thickness and sidewall orientation, SiGe alloy mole fraction, and external stress on the low-field electron mobility is investigated.

Keywords

Ge-Si alloys; MOSFET; electron mobility; semiconductor materials; tight-binding calculations; SiGe; alloy mole fraction; alloy-scattering-limited mobility; atomistic simulations; empirical tight-binding calculation; external stress; fin thickness; low-field electron mobility; nFinFETs; phonon-scattering-limited mobility; sidewall orientation; valence force field methods; Electric potential; Genetic algorithms; Metals; Phonons; Silicon; Silicon germanium; Stress; FinFET; SiGe; mobility; tight-binding method; valence force field method;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on

Conference_Location

Yokohama

ISSN

1946-1569

Print_ISBN

978-1-4799-5287-8

Type

conf

DOI

10.1109/SISPAD.2014.6931612

Filename

6931612