Title :
Atomistic simulations of phonon- and alloy-scattering-limited mobility in SiGe nFinFETs
Author :
Hong-Hyun Park ; Yang Lu ; Woosung Choi ; Young-Tae Kim ; Keun-Ho Lee ; Youngkwan Park
Author_Institution :
Device Lab., Samsung Semicond. Inc., San Jose, CA, USA
Abstract :
This paper presents atomistic simulation results about the performance limits of electron mobility in SiGe-channel nFinFETs, where phonon- and alloy-scattering-limited mobility are calculated based on the empirical tight-binding and the valence force field methods without any mobility fitting parameters. The effect of the changes in the fin thickness and sidewall orientation, SiGe alloy mole fraction, and external stress on the low-field electron mobility is investigated.
Keywords :
Ge-Si alloys; MOSFET; electron mobility; semiconductor materials; tight-binding calculations; SiGe; alloy mole fraction; alloy-scattering-limited mobility; atomistic simulations; empirical tight-binding calculation; external stress; fin thickness; low-field electron mobility; nFinFETs; phonon-scattering-limited mobility; sidewall orientation; valence force field methods; Electric potential; Genetic algorithms; Metals; Phonons; Silicon; Silicon germanium; Stress; FinFET; SiGe; mobility; tight-binding method; valence force field method;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931612
