Hole Mobility Model With Silicon Inversion Layer Symmetry and Stress-Dependent Piezoconductance Coefficients

Author

Bufler, Fabian M. ; Erlebach, Axel ; Oulmane, Mohamed

Author_Institution

Inst. fur Integrierte Syst., ETH Zurich, Zurich, Switzerland

Volume

30

Issue

9

fYear

2009

Firstpage

996

Lastpage

998

Abstract

A model for stress-induced effective hole mobility enhancement in ??110??/(001) bulk pMOSFETs is presented. The model is based on first- and second-order stress-dependent piezoconductance coefficients and considers the symmetry reduction compared to bulk silicon induced by surface scattering at the gate interface. The piezoconductance coefficients are determined by Monte Carlo (MC) device simulation for five particular stress configurations with a maximum stress level of 3 GPa. Finally, comparisons between MC simulations and the new mobility model for general stress configurations show a good agreement thus validating the new approach.

Keywords

MOSFET; Monte Carlo methods; electric admittance; hole mobility; piezoelectricity; semiconductor device models; Monte Carlo device simulation; gate interface; hole mobility model; silicon inversion layer symmetry; stress-dependent piezoconductance coefficients; stress-induced effective hole mobility enhancement; surface scattering; symmetry reduction; Mobility; Monte Carlo (MC) device simulation; PMOS; piezoconductance coefficients; stress engineering;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2027721

Filename

5196784