Title :
Monte Carlo simulation of InAlAs/InGaAs HEMTs with various shape of buried gate
Author :
Endoh, Akira ; Watanabe, Issei ; Kasamatsu, Akifumi ; Mimura, Takashi
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan
Abstract :
We carried out Monte Carlo (MC) simulation of In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (HEMTs) with various shape of buried gate. Especially, we examined the HEMT with a “realistic” buried gate in which the tip of gate foot is “round.” We found that the “effective” gate length is determined by the length of gate foot tip from the electron velocity profiles and electric field in the channel layer. Furthermore, the “round” tip of gate electrode is convenient to prevent breakdown.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; electrodes; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device breakdown; HEMT; InAlAs-InGaAs; Monte Carlo simulation; buried gate; electric field; electron velocity; gate electrode; high electron mobility transistors; Electric fields; Electric potential; Foot; HEMTs; Logic gates; MODFETs; Shape; Buried gate; Electric field; Electron velocity; Gate length; HEMTs; InAlAs; InGaAs; Monte Carlo simulation;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
Print_ISBN :
978-1-4799-5287-8
DOI :
10.1109/SISPAD.2014.6931613
