• DocumentCode
    128930
  • Title

    Influence of device geometry on the non-volatile magnetic flip flop characteristics

  • Author

    Windbacher, Thomas ; Mahmoudi, Hiwa ; Sverdlov, Viktor ; Selberherr, Siegfried

  • Author_Institution
    Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
  • fYear
    2014
  • fDate
    9-11 Sept. 2014
  • Firstpage
    297
  • Lastpage
    300
  • Abstract
    Recently, we proposed a non-volatile magnetic flip flop featuring a very small footprint. We studied its operational limits and current dependent characteristics. Since flip flops are commonly operated by clocked signals, their operation is time critical and the knowledge and understanding of their switching behavior is essential. In this work we study the dependence of the proposed flip flop on its device geometry. In order to facilitate the comparison to the previous results, the same device parameters are employed. The current density was fixed for both inputs at a value of 7 × 1010 A/m2, where all flip flops safely operated, and the free layers´ dimensions were varied, independently. The free layer thickness was found as the most critical parameter affecting the switching time, followed by the layer length and a negligible dependence on width.
  • Keywords
    flip-flops; geometry; clocked signals; current dependent characteristics; device geometry; layer length; nonvolatile magnetic flip flop characteristics; operational limits; switching time; Anisotropic magnetoresistance; Magnetic domains; Magnetic tunneling; Perpendicular magnetic anisotropy; Switches; Torque;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
  • Conference_Location
    Yokohama
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4799-5287-8
  • Type

    conf

  • DOI
    10.1109/SISPAD.2014.6931622
  • Filename
    6931622