DocumentCode
128930
Title
Influence of device geometry on the non-volatile magnetic flip flop characteristics
Author
Windbacher, Thomas ; Mahmoudi, Hiwa ; Sverdlov, Viktor ; Selberherr, Siegfried
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear
2014
fDate
9-11 Sept. 2014
Firstpage
297
Lastpage
300
Abstract
Recently, we proposed a non-volatile magnetic flip flop featuring a very small footprint. We studied its operational limits and current dependent characteristics. Since flip flops are commonly operated by clocked signals, their operation is time critical and the knowledge and understanding of their switching behavior is essential. In this work we study the dependence of the proposed flip flop on its device geometry. In order to facilitate the comparison to the previous results, the same device parameters are employed. The current density was fixed for both inputs at a value of 7 × 1010 A/m2, where all flip flops safely operated, and the free layers´ dimensions were varied, independently. The free layer thickness was found as the most critical parameter affecting the switching time, followed by the layer length and a negligible dependence on width.
Keywords
flip-flops; geometry; clocked signals; current dependent characteristics; device geometry; layer length; nonvolatile magnetic flip flop characteristics; operational limits; switching time; Anisotropic magnetoresistance; Magnetic domains; Magnetic tunneling; Perpendicular magnetic anisotropy; Switches; Torque;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location
Yokohama
ISSN
1946-1569
Print_ISBN
978-1-4799-5287-8
Type
conf
DOI
10.1109/SISPAD.2014.6931622
Filename
6931622
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