DocumentCode :
128930
Title :
Influence of device geometry on the non-volatile magnetic flip flop characteristics
Author :
Windbacher, Thomas ; Mahmoudi, Hiwa ; Sverdlov, Viktor ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear :
2014
fDate :
9-11 Sept. 2014
Firstpage :
297
Lastpage :
300
Abstract :
Recently, we proposed a non-volatile magnetic flip flop featuring a very small footprint. We studied its operational limits and current dependent characteristics. Since flip flops are commonly operated by clocked signals, their operation is time critical and the knowledge and understanding of their switching behavior is essential. In this work we study the dependence of the proposed flip flop on its device geometry. In order to facilitate the comparison to the previous results, the same device parameters are employed. The current density was fixed for both inputs at a value of 7 × 1010 A/m2, where all flip flops safely operated, and the free layers´ dimensions were varied, independently. The free layer thickness was found as the most critical parameter affecting the switching time, followed by the layer length and a negligible dependence on width.
Keywords :
flip-flops; geometry; clocked signals; current dependent characteristics; device geometry; layer length; nonvolatile magnetic flip flop characteristics; operational limits; switching time; Anisotropic magnetoresistance; Magnetic domains; Magnetic tunneling; Perpendicular magnetic anisotropy; Switches; Torque;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location :
Yokohama
ISSN :
1946-1569
Print_ISBN :
978-1-4799-5287-8
Type :
conf
DOI :
10.1109/SISPAD.2014.6931622
Filename :
6931622
Link To Document :
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