DocumentCode
1289377
Title
Oxide Trapping in the InGaAs– 
System and the Role of Sulfur in Reducing the  Al<sub>2</sub>O<sub>3</sub> layer was found to be significantly reduced by (NH<sub>4</sub>)<sub>2</sub>S treatment of the InGaAs surface prior to the Al<sub>2</sub>O<sub>3</sub> deposition. Indium concentration inside the Al<sub>2</sub>O<sub>3</sub> layer was found to be reduced once the InGaAs surface is (NH<sub>4</sub>)<sub>2</sub>S treated prior to the Al<sub>2</sub>O<sub>3</sub> deposition as measured by time-of-flight secondary ion mass spectroscopy, indicating indium as a possible origin of the oxide traps. The results suggest a new mechanism for the sulfur action at the InGaAs surface, which might be responsible for the transistor performance improvements observed after ( NH<sub>4</sub>)<sub>2</sub>S passivation. This mechanism involves sulfur as an indium diffusion/segregation barrier stabilizing the InGaAs surface during the ALD Al<sub>2</sub>O<sub>3</sub> deposition, lowering the oxide trap density. This, in turn, improves the electron mobility through a reduction in the Coulomb scattering of the carriers due to border traps and improves the device drive current.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>III-V semiconductors; alumina; atomic layer deposition; electron mobility; gallium arsenide; indium compounds; passivation; secondary ion mass spectra; sulphur; ALD layer; Coulomb scattering; InGaAs; InGaAs-Al<sub>2</sub>O<sub>3</sub>; S; atomic-layer-deposited layer; border traps; charge injection; electron mobility; indium concentration; indium diffusion-segregation barrier; oxide trap density; passivation; sensing method; time-of-flight secondary ion mass spectroscopy; trap spectroscopy; Aluminum oxide; Electron mobility; Indium gallium arsenide; MOSFETs; Surface treatment; <formula formulatype=)
$( hbox{NH}_{4})_{2}hbox{S}$ ; $hbox{Al}_{2}hbox{O}_{3}$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2012.2212692
Filename
6310008
Link To Document