Efficiency Enhancement of Blue InGaN Light-Emitting Diodes With Shallow First Well

Author

Wang, Tsun-Hsin ; Kuo, Yen-Kuang

Author_Institution

Dept. of Phys., Nat. Changhua Univ. of Educ., Changhua, Taiwan

Volume

24

Issue

22

fYear

2012

Firstpage

2084

Lastpage

2086

Abstract

Efficiency enhancement of blue InGaN/GaN light-emitting diodes (LEDs) with shallow first well is investigated. Energy band diagrams, carrier concentrations in quantum wells, spontaneous emission spectra, light-current-voltage performance curves, and internal quantum efficiency are studied. Simulation results show that the LED is markedly improved when regular first well is replaced by shallow first well due to reduced polarization field and thereby enhanced injection efficiency of carriers in quantum wells. The proposed structure is beneficial for the blue InGaN LED even at a high level of current injection.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; blue light-emitting diodes; carrier concentrations; efficiency enhancement; energy band diagrams; internal quantum efficiency; light-current-voltage performance curves; polarization field; quantum wells; shallow first well; spontaneous emission spectra; Gallium nitride; Indium; Light emitting diodes; Mathematical model; Optical polarization; Simulation; Spontaneous emission; InGaN; light-emitting diodes; quantum well;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2220131

Filename

6310011