Title :
The importance of the internal bulk-source potential on the low temperature kink in NMOSTs
Author :
Deferm, Ludo ; Simoen, E. ; Claeys, Cor
Author_Institution :
IMEC, Leuven, Belgium
fDate :
6/1/1991 12:00:00 AM
Abstract :
The kink occurring at low temperatures in the IDS -VDS curves of NMOS transistors is explained by the direct correlation between the current injected into the source, the internal bulk potential, and the resulting change in threshold voltage. A semi-two-dimensional analytical model is derived for calculating the influence of the multiplication current from room temperature down to liquid-helium temperature. Only steady-state equations are derived and no time effects are included. The proposed model gives the possibility of quite accurately calculating the influence of the device geometry. Extension to the case of silicon-on-insulator (SOI) transistors is also briefly discussed
Keywords :
insulated gate field effect transistors; semiconductor device models; 2D model; 300 to 4.2 K; NMOS transistors; SOI transistors; Si; bulk transistors; change in threshold voltage; device geometry; internal bulk-source potential; low temperature kink; multiplication current; room temperature; steady-state equations; Analytical models; Bipolar transistors; CMOS technology; Cryogenics; Geometry; Helium; Impedance; MOSFETs; Temperature; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
