DocumentCode
1289495
Title
A 65 GHz LNA/Phase Shifter With 4.3 dB NF Using 45 nm CMOS SOI
Author
Uzunkol, Mehmet ; Rebeiz, Gabriel M.
Author_Institution
Electr. & Comput. Eng. Dept., Univ. of California San Diego, La Jolla, CA, USA
Volume
22
Issue
10
fYear
2012
Firstpage
530
Lastpage
532
Abstract
This letter presents the first 45 nm CMOS SOI LNA/phase shifter for 60 GHz applications. The 3 b phase shifter is designed using a switched-LC approach and results in only 6 dB loss at 65 GHz. The LNA/phase shifter front-end results in a gain of 6.5 dB, a noise figure of 4.3 dB, and an input <;i>;P<;/i>;1dB of - 13.5 dBm (limited by the amplifier) with a power consumption of 15 mW. This work shows that advanced CMOS processes are essential for low power, medium linearity 60 GHz phased arrays.
Keywords
CMOS integrated circuits; low noise amplifiers; phase shifters; silicon-on-insulator; CMOS; LNA; SOI; frequency 65 GHz; phase shifter; phased arrays; size 45 nm; switched-LC approach; CMOS integrated circuits; Gain; Loss measurement; Noise; Noise measurement; Phase measurement; Phase shifters; 45 nm CMOS; low noise amplifier (LNA); millimeter-wave; phase shifter;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2012.2218651
Filename
6310080
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