Title :
Effects of gamma-ray irradiation on thin-gate-oxide VDMOSFET characteristics
Author :
Sakai, Tatsuo ; Yachi, Toshiaki
Author_Institution :
NTT Appl. Electron. Lab., Tokyo, Japan
fDate :
6/1/1991 12:00:00 AM
Abstract :
Effects of gamma-ray irradiation on thin-gate-oxide VDMOSFET characteristics are described. The gate-oxide thickness of the device is 34 nm. The device has a radiation tolerance of 2×105 rad, which is four times higher than that of 100-nm gate-oxide device. Although the thin gate oxide increases input capacitance, reverse transfer capacitance is reduced by using the VDMOSFET cell structure with an additional p region. The VDMOSFET is suitable as a switching device for high-frequency switching power supplies used in communication satellites
Keywords :
gamma-ray effects; insulated gate field effect transistors; power transistors; radiation hardening (electronics); switched mode power supplies; 2E5 rad; 34 nm; MOSFETs; VDMOSFET cell structure; additional p region; gamma-ray irradiation effects; gate-oxide thickness; high-frequency switching power supplies; input capacitance; radiation tolerance; reverse transfer capacitance; switching device; thin-gate-oxide VDMOSFET characteristics; Artificial satellites; Capacitance; Communication switching; Degradation; Electric variables; Frequency; Helium; Power supplies; Switching circuits; Transformers;
Journal_Title :
Electron Devices, IEEE Transactions on
